@article { ISI:000342328300031,
	title = {Pulsed laser-deposited MoS2 thin films on W and Si: field emission and photoresponse studies},
	journal = {ACS Applied Materials \& Interfaces},
	volume = {6},
	number = {18},
	year = {2014},
	month = {SEP},
	pages = {15881-15888},
	publisher = {AMER CHEMICAL SOC},
	address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
	abstract = {<p>We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field enhancement in field emission application. In the case of the MoS2 film on silicon (Si), the turn-on field required to draw an emission current density of 10 mu A/cm(2) is found to be 2.8 V/mu m. Interestingly, the MoS2 film on a tungsten (W) tip emitter delivers a large emission current density of similar to 30 mA/cm(2) at a relatively lower applied voltage of similar to 3.8 kV. Thus, the PLD-MoS2 can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLDMoS2 heterostructures. Finally we show that MoS2 films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.</p>},
	keywords = {field emission, MoS2, photodiode heterostructures, pulsed laser deposition, thin film},
	issn = {1944-8244},
	doi = {10.1021/am503464h},
	author = {Late, Dattatray J. and Shaikh, Parvez A. and Khare, Ruchita T. and Kashid, Ranjit V. and Chaudhary, Minakshi V. and More, Mahendra A. and Ogale, Satishchandra B.}
}
@article { ISI:000354067400001,
	title = {Stable field emission from layered MoS2 nanosheets in high vacuum and observation of 1/f noise},
	journal = {Nanomaterials and Nanotechnology},
	volume = {5},
	year = {2015},
	month = {APR},
	pages = {10},
	publisher = {INTECH EUROPE},
	address = {JANEZA TRDINE 9, RIJEKA, 51000, CROATIA},
	abstract = {<p>Field emission and current noise of hydrothermally synthesized MoS2 nanosheets are investigated in ultra-high-vacuum and industrially suited high-vacuum conditions. The study reveals that the emission turn-on field is pressure dependent. Moreover, the MoS2 nanosheets exhibit more stable field-electron emission in high-vacuum than in ultra-high-vacuum conditions. The investigations on field-emission current fluctuations show features of 1/f-type noise in ultra-high-vacuum and high-vacuum conditions, attributed to adsorption and desorption processes. The post-field-emission results indicate the MoS2 nanosheets are a robust field emitter in high-vacuum conditions.</p>},
	keywords = {Electron emission, layered materials, MoS2, Noise measurement, Raman spectroscopy},
	issn = {1847-9804},
	doi = {10.5772/60071},
	author = {Kashid, Ranjit V. and Joag, Pracheetee D. and Thripuranthaka, M. and Rout, Chandra S. and Late, Dattatray J. and More, Mahendra A.}
}
