02455nas a2200301   4500008004100000022001400041245016000055210006900215260000900284300001600293490000700309520139100316653003101707653003201738653002601770653002801796653002401824653002101848100001701869700002301886700002001909700002901929700001901958700000501977700002201982700002502004856012402029       2021                        eng d  a1944-824400aResistive switching in HfO2-x/La0.67Sr0.33MnO3 heterostructures: an intriguing case of low H-field susceptibility of an E-field controlled active interface0 aResistive switching in HfO2xLa067Sr033MnO3 heterostructures an i  cNOV   a54133-541420 v133 aHigh-performance nonvolatile resistive random access memories (ReRAMs) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emerging Internet of Things (IoT) arena. Here, we examine the resistive switching (RS) behavior in growth-controlled HfO2/La0.67Sr0.33MnO3 (LSMO) heterostructures and their tunability in a low magnetic field. It is demonstrated that oxygen-deficient HfO2 films show bipolar switching with a high on/off ratio, stable retention, as well as good endurance owing to the orthorhombic-rich phase constitution and charge (de)trapping-enabled Schottky-type conduction. Most importantly, we have demonstrated that RS can be tuned by a very low externally applied magnetic field (similar to 0-30 mT). Remarkably, application of a magnetic field of 30 mT causes RS to be fully quenched and frozen in the high resistive state (HRS) even after the removal of the magnetic field. However, the quenched state could be resurrected by applying a higher bias voltage than the one for initial switching. This is argued to be a consequence of the electronically and ionically ``active'' nature of the HfO2-x/LSMO interface on both sides and its susceptibility to the electric and low magnetic field effects. This result could pave the way for new designs of interface-engineered high-performance oxitronic ReRAM devices.10acharge trapping-detrapping10alow external magnetic field10aoxide-oxide interface10apulsed laser deposition10aresistive switching10aSchottky barrier1 aAntad, Vivek1 aShaikh, Parvez, A.1 aBiswas, Abhijit1 aRajput, Shatruhan, Singh1 aDeo, Shrinivas1 a1 aPatil, Shivprasad1 aOgale, Satishchandra  uhttp://library.ncl.res.in/content/resistive-switching-hfo2-xla067sr033mno3-heterostructures-intriguing-case-low-h-field02630nas a2200289   4500008004100000245014600041210006900187260000800256300001400264490000600278520164500284653001801929653001801947653002701965653001701992653002402009653003402033653000802067100001702075700001902092700001802111700002302129700001902152700001902171700001902190856013102209       2024                        eng d00aScanning tunneling microscopy investigation of synaptic behavior in AgInS2 quantum dots: effect of ion transport in neuromorphic applications0 aScanning tunneling microscopy investigation of synaptic behavior  cMAR  a7226-72360 v73 a<p>
	Scanning tunneling microscopy (STM) is a powerful technique for investigating the nanoscale properties of functional materials. Additionally, scanning tunneling spectroscopy (STS) facilitates the determination of the local density of states (LDOS) within the material. In this study, we present an exploration of the resistive switching (RS) properties and neuromorphic computing capabilities of individual AgInS2 quantum dots, utilizing STM and STS techniques. By examining the material's bandgap and its temperature dependence, we uncover a nonlinear variation below the Debye temperature and a linear trend at higher temperatures. Moreover, STS measurements demonstrate changes in the conducting states induced by localized pulses, further confirming the unique characteristics of the quantum dots. The experimental devices constructed by using these quantum dots effectively replicate the RS properties observed at the nanoscale. To assess the neuromorphic application of the devices, pulse transient measurements simulating the learning and forgetting processes were conducted. The gradual set and reset processes successfully mimic the information retention and erasure capabilities essential for neuromorphic computing. Notably, the resistive switching mechanism in these devices is attributed to localized ionic transport, which highlights the significant involvement of ionic species in the observed RS behavior. The outcomes of this study contribute to the fundamental understanding of RS properties in single AgInS2 quantum dots and offer valuable insights into their potential applications in neuromorphic computing.</p>
10acorona poling10aIon transport10aneuromorphic computing10aquantum dots10aresistive switching10aScanning tunneling microscopy10aSTS1 aBetal, Atanu1 aChetia, Anupam1 aBera, Jayanta1 aSaikia, Dibyajyoti1 aSharma, Ashish1 aRath, Arup, K.1 aSahu, Satyajit  uhttp://library.ncl.res.in/content/scanning-tunneling-microscopy-investigation-synaptic-behavior-agins2-quantum-dots-effect-ion